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GM71C(S)17403C/CL
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Description
The GM71C(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C(S)17403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)17403C/CL offers Extended Data Out (EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)17403C/CL to be packaged in a standard 300 mil 24(26) pin SOJ and a standard 300mil 24(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 5V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
Features
* 4,194,304 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC
GM71C(S)17403C/CL-5 GM71C(S)17403C/CL-6 GM71C(S)17403C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 24(26) SOJ
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VCC I/O1 I/O2 WE RAS NC A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 26 25 24 23 22 21
* Low Power Active : 660/605/550mW (MAX) Standby : 11mW (CMOS level : MAX) : 0.83mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible * 2048 Refresh Cycles/32ms * 2048 Refresh Cycles/128ms (L-version) * Battery Backup Operation (L-version) * Test Function : 16bit parallel test mode
24(26) TSOP II
VSS I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 VSS VCC I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 26 25 24 23 22 21
VSS I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 VSS
8 9 10 11 12 13
19 18 17 16 15 14
8 9 10 11 12 13
19 18 17 16 15 14
(Top View)
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Pin Description
Pin
A0-A10 A0-A10 I/O1-I/O4 RAS CAS
Function
Address Inputs Refresh Address Inputs Data-input/Data-output Row Address Strobe Column Address Strobe
Pin
WE OE VCC VSS NC
Function
Read/Write Enable Output Enable Power (+5V) Ground No Connection
Ordering Information
Type No.
GM71C(S)17403CJ/CLJ-5 GM71C(S)17403CJ/CLJ-6 GM71C(S)17403CJ/CLJ-7 GM71C(S)17403CT/CLT-5 GM71C(S)17403CT/CLT-6 GM71C(S)17403CT/CLT-7
Access Time
50ns 60ns 70ns 50ns 60ns 70ns
Package
300 Mil 24(26) Pin Plastic SOJ 300 Mil 24(26) Pin Plastic TSOP II
Absolute Maximum Ratings*
Symbol TA TSTG
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Parameter
Ambient Temperature under Bias Storage Temperature (Plastic) Voltage on any Pin Relative to VSS Voltage on VCC Relative to VSS Short Circuit Output Current Power Dissipation
Rating
0 ~ 70 -55 ~ 125 -1.0 ~ 7.0 -1.0 ~ 7.0 50 1.0
Unit
C C V V mA W
VIN/VOUT VCC IOUT PD
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions (TA = 0 ~ 70C)
Symbol VCC VIH VIL Parameter
Supply Voltage Input High Voltage Input Low Voltage
Min
4.5 2.4 -1.0
Typ
5.0 -
Max
5.5 6.5 0.8
Unit
V V V
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
DC Electrical Characteristics (VCC = 5.0V+/-10%, VSS = 0V, TOPR = 0 ~ 70C)
Symbol VOH VOL ICC1 Parameter
Output Level Output "H" Level Voltage (IOUT = -2mA) Output Level Output "L" Level Voltage (IOUT = 2mA) Operating Current Average Power Supply Operating Current (RAS, CAS Cycling : tRC = tRC min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH, DOUT = High-Z) RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) EDO Page Mode Current Average Power Supply Current EDO Page Mode (tHPC = tHPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >= VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns 70ns
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Min
2.0 0 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns -
Max
VCC 0.4 120 110 100 2 100 90 80 90 80 70 1 150 100 90 80 350
Unit
V V
Note
mA
1, 2
ICC2
mA
ICC3
mA
2
ICC4
mA
1, 3
ICC5
mA uA mA 5
ICC6
ICC7
Battery Backup Operating Current(Standby with CBR Refresh) (CBR refresh, tRC = 62.5us, tRAS <= 0.3us, DOUT = High-Z, CMOS interface) Standby Current RAS = VIH CAS = VIL DOUT = Enable Input Leakage Current Any Input (0V<=VIN<= 6V) Output Leakage Current (DOUT is Disabled, 0V<=VOUT<= 6V)
uA
4,5
ICC8
-
5
mA
1
IL(I) IL(O)
-10 -10
10 10
uA uA
Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. CAS = L (<=0.2) while RAS = L (<=0.2). 5. L-version.
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Capacitance (VCC = 5V+/-10%, TA = 25C)
Symbol CI1 CI2 CI/O Parameter
Input Capacitance (Address) Input Capacitance (Clocks) Output Capacitance (Data-In/Out)
Min
-
Max
5 7 7
Unit
pF pF pF
Note
1 1 1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable DOUT.
AC Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C, Notes 1, 2, 18, 19)
Test Conditions Input rise and fall times: 2 ns Input timing reference levels: 0.8V, 2.4V Output timing reference levels: 0.8V, 2.0V Output load : 1 TTL gate + CL (100pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol Parameter
Random Read or Write Cycle Time RAS Precharge Time CAS Precharge Time RAS Pulse Width CAS Pulse Width Row Address Set up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time RAS to CAS Delay Time RAS to Column Address Delay Time RAS Hold Time CAS Hold Time CAS to RAS Precharge Time OE to DIN Delay Time OE Delay Time from DIN CAS Delay Time from DIN Transition Time (Rise and Fall)
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403 C/CL-6 C/CL-7 C/CL-5
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Note
Min Max Min Max Min Max
tRC tRP tCP tRAS tCAS tASR
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84 30 7
-
104 40 10
-
124 50 13
-
50 10,000 7 10,000 0 7 0 7 11 9 10 35 5 13 0 0 2 37 25 50
60 10,000 10 10,000 0 10 0 10 14 12 13 40 5 15 0 0 2 45 30 50
70 10,000 13 10,000 0 10 0 13 14 12 13 45 5 18 0 0 2 52 35 50
21 22
tASC tCAH tRCD tRAD tRSH tCSH tCRP tODD tDZO tDZC tT
3 4
24
5 6 6 7
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Read Cycle
Symbol Parameter
Access Time from RAS Access Time from CAS Access Time from Address Access Time from OE Read Command Setup Time Read Command Hold Time to CAS Read Command Hold Time to RAS Column Address to RAS Lead Time Column Address to CAS Lead Time CAS to Output in Low-Z Output Data Hold Time Output Data Hold Time from OE Output Buffer Turn-off Time Output Buffer Turn-off Time to OE CAS to DIN Delay Time Read Command Hold Time from RAS Output Data hold Time from RAS Output Buffer turn off to RAS Output Buffer turn off to WE WE to DIN Delay Time RAS to DIN Delay Time
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Note
8,9,19
9,10,17,19 9,11,17,19
Min Max
Min Max Min Max 0 0 5 30 18 0 3 3 15 60 3 15 15 60 15 30 15 15 15 15 15 0 0 5 35 23 0 3 3 18 70 3 18 18 70 18 35 18 15 15 15 15 -
tRAC tCAC tAA tOAC tRCS tRCH tRRH tRAL tCAL tCLZ tOH tOHO tOFF tOEZ tCDD
tRCHR tOHR tOFR www..com tWEZ tWDD tRDD
0 0 5 25 15 0 3 3 13 50 3 13 13
50 13 25 13 13 13 13 13 -
9
12 12
13 13,23 5
13,23 13
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Write Cycle
Symbol Parameter
Write Command Setup Time Write Command Hold Time Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Setup Time Data-in Hold Time
GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 GM71C(S)17403 C/CL-7
Unit
ns ns ns ns ns ns ns
Note
14
Min Max Min Max Min Max
tWCS tWCH
0 7 7 7 7 0 7
-
0 10 10 10 10 0 10
-
0 13 10 13 13 0 13
-
tWP
tRWL tCWL tDS tD
H
15 15
Read- Modify-Write Cycle
Symbol Parameter
Read-Modify-Write Cycle Time RAS to WE Delay Time CAS to WE Delay Time Column Address to WE Delay Time OE Hold Time from WE
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns
Note
Min Max Min Max Min Max
tRWC tRWD tCWD tAWD tOEH
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111 67 30 42 13
-
136 79 34 49 15
-
161 92 40 57 18
-
14 14 14
Refresh Cycle
Symbol Parameter
CAS Setup Time (CAS-before-RAS Refresh Cycle) CAS Hold Time (CAS-before-RAS Refresh Cycle) WE Setup Time (CAS-before-RAS Refresh Cycle) WE Hold Time (CAS-before-RAS Refresh Cycle) RAS Precharge to CAS Hold Time
GM71C(S)17403 C/CL-5 GM71C(S)17403 GM71C(S)17403 C/CL-6 C/CL-7
Unit
Note
Min
Max Min Max Min Max 5 10 0 10 5 5 10 0 10 5 ns ns ns ns ns
tCSR tCHR tWRP tWRH tRPC
5 7 0 10 5
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
EDO Page Mode Cycle
Symbol Parameter
EDO Page Mode Cycle Time EDO Page Mode RAS Pulse Width Access Time from CAS Precharge RAS Hold Time from CAS Precharge Output data Hold Time from CAS low CAS Hold Time referred OE CAS to OE Setup Time Read command Hold Time from CAS Precharge
GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 GM71C(S)17403 C/CL-7
Unit
ns ns ns ns ns ns ns ns
Note
20 16 9,17,19
Min Max Min Max Min Max
tHPC tRASP tACP tRHCP tDOH tCOL tCOP tRCHP
20 30 3 7 5 30
100,000
25 35 3 10 5 35
100,000
30 40 3 13 5 40
100,000
30 -
35 -
40 -
9
EDO Page Mode Read-Modify-Write Cycle
Symbol Parameter
EDO Page Mode Read-Modify-Write Cycle Time WE Delay Time from CAS Precharge
GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 GM71C(S)17403 C/CL-7
Unit
ns ns
Note
Min Max Min Max Min Max
tHPRWC tCPW
57 45
-
68 54
-
79 62
-
14
Refresh
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Parameter
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 C/CL-7
Unit
Note
2048 cycles 2048 cycles
Min Max Min Max Min Max
tREF tREF
Refresh period Refresh period (L -Series)
-
32 128
-
32 128
-
32 128
ms ms
-
-
Test Mode Cycle 19
Symbol Parameter
Test Mode WE Setup Time Test Mode WE Hold Time
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns
Note
Min Max Min Max Min Max
tWTS tWTH
0 10
-
0 10
-
0 10
-
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Notes: 1. AC Measurements assume tT = 2ns. 2. An initial pause of 200us is required after power up followed by a minimum of eight initialization cycles (any combination of cycles containing RAS-only refresh or CAS-beforeRAS refresh). If the internal refresh counter is used, a minimum of eight CAS-before-RAS refresh cycles are required. 3. Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. 4. Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is controlled exclusively by tAA. 5. Either tODD or tCDD must be satisfied. 6. Either tDZO or tDZC must be satisfied. 7. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH(min) and VIL(max). 8. Assume that tRCD<=tRCD(max) and tRAD<=tRAD(max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC exceeds the value shown. 9. Measured with a load circuit equivalent to 1 TTL loads and 100pF. 10. Assume that tRCD>=tRCD(max) and tRAD<=tRAD(max). 11. Assume that tRCD<=tRCD(max) and tRAD>=tRAD(max). 12. Either tRCH or tRRH must be satisfied for a read cycles.
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13. tOFF(max) and tOEZ(max) define the time at which the outputs achieve the open circuit condition and are not referenced to output voltage levels. 14. tWCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only; if tWCS>=tWCS(min), the cycles is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD>=tRWD(min), the tCWD>=tCWD(min), and tAWD>=tAWD(min), or tCWD>=tCWD(min), tAWD>= tAWD(min) and tCPW>=tCPW(min), the cycle is a read-modify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 15. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in delayed write or read-modify-write cycles. 16. tRASP defines RAS pulse width in fast page mode cycles. 17. Access time is determined by the longer of tAA or tCAC or tACP
Rev 0.1 / Apr'01
GM71C(S)17403C/CL
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. After RAS is reset, if tOEH>=tCWL, the I/O pin will remain open circuit (high impedance); if tOEH<=tCWL, invalid data will be out at each I/O. 19. The 16M DRAM offers a 16-bit time saving parallel test mode. Address CA0 and CA1 for the 4M x 4 are don't care during test mode. Test mode is set by performing a WE-and-CAS-beforeRAS (WCBR) cycle. In 16-bit parallel test mode, data is written into 4 bits in parallel at each I/O (I/O1 to I/O4) and read out from each I/O. If 4 bits of each I/O are equal (all 1s or 0s), data output pin is high state during test mode read cycle, then the device has passed. If they are not equal, data output pin is a low state, then the device has failed. Refresh during test mode operation can be performed by normal read cycles or by WCBR refresh cycles. To get out of test mode and enter a normal operation mode, perform either a regular CAS-before-RAS refresh cycle or RAS-only refresh cycle. 20. In a test mode read cycle, the value of tRAC, tAA, tCAC and tACP is delayed by 2ns to 5ns for the specified value. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 21. tRAS(min) = tRWD(min) + tRWL(min) + tT in Read - Modify - Write cycle. 22. tCAS(min) = tCWD(min) + tCWL(min) + tT in Read - Modify - Write cycle. 23. tOFF and tOFR are determined by the later rising edge of RAS or CAS. 24. tCSH(min) can be achieved when tRCD <= tCSH(min) - tCAS(min).
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Rev 0.1 / Apr'01
GM71C(S)17403C/CL
Package Dimension
24(26) SOJ
0.025(0.64) MIN 0.295(7.49) MIN 0.305(7.75) MAX 0.329(8.38) MIN 0.340(8.64) MAX
Unit: Inches (mm)
0.661(16.80) MIN 0.669(17.00) MAX
0.085(2.16) MIN
0.128(3.25) MIN 0.147(3.75) MAX 0.050(1.27) TYP 0.015(0.38) MIN 0.020(0.50) MAX 0.026(0.66) MIN 0.032(0.81) MAX
24(26) TSOP (TYPE II)
0~5
o
0.016(0.40) MIN 0.024(0.60) MAX
0.296(7.52) MIN 0.303(7.72) MAX
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0.670(17.04) MIN 0.678(17.24) MAX 0.037(0.95) MIN 0.041(1.05) MAX 0.047(1.20) MAX 0.012(0.30) MIN 0.020(0.50) MAX 0.050(1.27) TYP 0.003(0.08) MIN 0.007(0.18) MAX
0.355(9.02) MIN 0.371(9.42) MAX
0.004(0.12) MIN 0.008(0.21) MAX
Rev 0.1 / Apr'01
0.275(6.99) MAX
0.260(6.60) MIN

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